2N4401TF

Single Bipolar Transistors Overview

The onsemi 2N4401TF is a general-purpose NPN silicon epitaxial planar transistor housed in a TO-92-3 (TO-226AA) leaded package. It features a collector-emitter breakdown voltage of 40 V and a maximum continuous collector current of 600 mA. The device has a maximum power dissipation rating of 625 mW at 25°C ambient temperature. Its transition frequency is specified at 250 MHz, with typical switching times of 7 ns for turn-on and 20 ns for turn-off. The DC current gain (hFE) ranges from 100 to 300 when tested at a collector current of 150 mA and a collector-emitter voltage of 1 V.

Single Bipolar Transistors Feature Summary

• Utilizes an NPN silicon planar epitaxial structure designed for robustness and reliability in standard electronic circuits.
• Engineered for high-speed switching applications, offering fast transition frequencies suitable for digital logic interfacing.
• Provides consistent DC current amplification characteristics across the specified operating range for stable signal processing.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-frequency amplifier stages
• Driver interfaces for relays and LEDs

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TF' against the manufacturer's official datasheet to confirm the packaging configuration, as this designation typically indicates reel or cut tape supply rather than bulk. Ensure that the ordering documentation explicitly references the onsemi part number 2N4401TF to avoid substitution errors with other manufacturers' equivalents or different packaging variants like the BU series. Cross-reference the RoHS compliance status directly with the latest component declaration provided by the supplier.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN small-signal transistor is required for low-power switching or amplification tasks within a 40 V limit. The TO-92-3 package is appropriate for through-hole mounting on printed circuit boards where space constraints are moderate. Consider the thermal resistance and power dissipation limits if the application involves sustained high-current loads, ensuring adequate heat sinking or airflow is available to maintain junction temperatures within safe operating areas.

Single Bipolar Transistors Part Context

This component belongs to the widely adopted 2N4401 family of NPN transistors, which serves as a fundamental building block in analog and digital electronics. Manufactured by onsemi, it represents a mature technology optimized for cost-effective mass production while maintaining strict performance tolerances. The device is commonly used as a drop-in replacement for legacy designs requiring reliable NPN switching capabilities in consumer and industrial equipment.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the MMBT4401 for surface-mount requirements and generic equivalents such as the BC547 or 2N3904, provided pinout compatibility and electrical ratings align with the design specifications. Verify that any alternative device meets the same 40 V breakdown and 600 mA current limits to ensure functional parity without compromising circuit safety margins.