2N4989

Overview

The Harris Corporation 2N4989 is a discrete N-channel power MOSFET designed for high-voltage switching applications. It utilizes a TO-3 through-hole package to facilitate robust thermal management in industrial environments. The device features a drain-source voltage rating of 250 V and supports a continuous drain current of 8.8 A at case temperature. Key electrical characteristics include a maximum on-resistance of 280 mΩ at 10 V gate drive, a gate charge of 59 nC, and an input capacitance of 1300 pF. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 125 W.

Feature Summary

• High-voltage capability suitable for demanding power switching circuits
• Robust thermal performance via metal TO-3 package construction
• Low on-resistance for efficient conduction at rated currents

Applications

• Industrial motor control systems
• High-power DC-DC converter stages
• Inverter bridge circuits

Procurement Notes

Verify the manufacturer origin carefully, as Harris Semiconductor assets were acquired by Renesas Electronics. Confirm whether the component is a legacy Harris part or a modern equivalent. Check RoHS compliance status, as older Harris inventory may not meet current environmental standards. Ensure the TO-3 package dimensions match your existing board layout requirements before procurement.

Selection Notes

Select this component when a rugged, high-voltage N-channel MOSFET is required for through-hole assembly. The TO-3 package offers superior heat dissipation compared to plastic packages, making it ideal for high-power density designs. Consider the 250 V rating and 8.8 A current capacity against your specific load requirements. Evaluate the 280 mΩ on-resistance impact on overall system efficiency.

Part Context

The 2N4989 belongs to the class of discrete power semiconductors manufactured by Harris Corporation, a company historically prominent in semiconductor technology before its acquisition. This specific part number represents a standard N-channel enhancement mode MOSFET. It was widely used in analog and power electronics during the era of Harris's independent manufacturing operations.

Replacement Considerations

Renesas Electronics holds the rights to Harris Semiconductor products. Verify if Renesas offers direct cross-references or updated equivalents that maintain the same pinout and electrical specifications while meeting modern regulatory requirements.