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The 2N6027RLRA is a programmable unijunction transistor (PUT) manufactured by onsemi. It features a four-layer semiconductor structure with anode, cathode, and gate terminals. The device operates within a DC voltage rating of 40 V and supports a maximum power dissipation of 300 mW. It is housed in a TO-92 (TO-226AA) surface-mount or through-hole compatible package. The component exhibits a typical peak output voltage of 11 V and maintains low gate-to-anode leakage current specifications.
Verify the specific suffix RLRA against the official datasheet to confirm packaging type and reel specifications. Ensure the procurement source provides valid traceability documentation. Confirm that the component meets current RoHS compliance standards as defined by the manufacturer's environmental declarations. Cross-reference the part number with the latest obsolescence notices to avoid supply chain disruptions.
Select this component when designing circuits requiring a programmable switching threshold rather than a fixed junction barrier. Evaluate the external resistor network requirements to set the desired intrinsic standoff ratio. Consider the thermal management capabilities of the TO-92 package relative to the expected duty cycle and ambient operating temperature conditions.
This device belongs to the 2N6027 series of programmable unijunction transistors. It serves as a solid-state alternative to traditional silicon-controlled rectifiers in applications where precise timing and programmable firing angles are necessary. The series is widely utilized in industrial control systems and consumer electronics for reliable pulse generation.
Consult the official cross-reference guide for direct replacements. Verify pinout compatibility and electrical parameter equivalence before substitution. Generic equivalents may lack the specific programmability features of the original component.
The intrinsic standoff ratio is not fixed internally but is programmed externally by selecting specific resistor values connected to the gate terminal.
The device is rated for operation up to a maximum junction temperature of 150 °C, with a storage temperature range typically extending from -55 °C to +150 °C.