2N6028 PBFREE

Overview

The Central Semiconductor Corp 2N6028 PBFREE is a silicon programmable unijunction transistor housed in a TO-92 epoxy molded package. It features adjustable characteristics including valley current, peak current, and intrinsic standoff ratio. Key electrical parameters include a maximum DC forward anode current of 150 mA and power dissipation of 300 mW at 25°C. The device supports an operating junction temperature range from -50°C to +100°C.

Feature Summary

• Features adjustable intrinsic standoff ratio for customizable circuit timing
• Offers low gate-to-anode leakage current for stable operation
• Provides high peak output voltage capability

Applications

• Thyristor triggering circuits
• Oscillator designs
• Pulse generation circuits
• Timing applications

Procurement Notes

Verify the specific ordering suffix required for your manufacturing needs. The PBFREE designation indicates lead-free plating compliance. Tin/Lead plated versions require the TIN/LEAD suffix. Confirm RoHS status and environmental compliance requirements with the manufacturer before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring programmable unijunction transistor functionality with through-hole mounting. Ensure the 40V voltage rating and 150mA current capacity meet the application demands. Consider the TO-92 package dimensions for PCB layout constraints and thermal management requirements within the specified operating temperature range.

Part Context

This device belongs to the 2N6027/2N6028 series of silicon programmable unijunction transistors manufactured by Central Semiconductor Corp. These devices are designed for applications where adjustable characteristics such as valley current and peak current are necessary. The series utilizes an epoxy molded package suitable for automated insertion equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.