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The Central Semiconductor Corp 2N6027 is a silicon Programmable Unijunction Transistor (PUT) housed in a TO-92-3 through-hole package. It features a maximum power dissipation of 300 mW and operates within a temperature range of -55°C to +100°C. The device supports a peak voltage of 40V, with gate forward voltage at 5.0V and gate reverse voltage at 40V. Anode-to-cathode voltage is rated at 40V.
Verify the specific ordering suffix to confirm lead plating composition, as tin/lead variants differ from lead-free equivalents. Ensure the procurement documentation explicitly states the TO-92-3 package configuration and the 300 mW power rating. Cross-reference the manufacturer part number against official datasheets to confirm compatibility with existing thermal management requirements.
Select this component when a programmable unijunction transistor is required for timing or triggering functions. Consider the 300 mW power dissipation limit and the -55°C to +100°C operating range during design. Verify that the 40V peak voltage rating meets the circuit's maximum potential requirements before implementation.
This component belongs to the 2N6027 series of silicon programmable unijunction transistors manufactured by Central Semiconductor Corp. These devices are engineered for applications requiring precise control over firing angles and timing intervals. The series is widely utilized in industrial electronics where stable programmable switching is essential.
The ON Semiconductor 2N6027RL1 is a confirmed substitute offering identical electrical specifications and pinout compatibility. Both devices utilize the TO-92 package and share the same functional parameters for direct replacement in existing designs.