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Product Detailed Parameters
- Description：.8A 30V TH SCR
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Voltage - Off State：30 V
- Voltage - Gate Trigger (Vgt) (Max)：800 mV
- Current - Gate Trigger (Igt) (Max)：200 µA
- Current - Hold (Ih) (Max)：5 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：10A @ 60Hz
- SCR Type：Sensitive Gate
- Operating Temperature：-40°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Voltage - On State (Vtm) (Max)：1.7 V
- Current - On State (It (AV)) (Max)：510 mA
- Current - On State (It (RMS)) (Max)：800 mA
- Current - Off State (Max)：10 µA
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Overview
The Central Semiconductor Corp 2N5060 TIN/LEAD is a silicon planar avalanche rectifier diode designed for high-reliability applications. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward current rating of 1 A. The device supports a peak forward surge current of 30 A under half-sine wave conditions. It operates within a junction temperature range of -65°C to +200°C and is housed in a DO-41 axial leaded package. The component complies with RoHS 3 standards and is classified under ECCN EAR99.
Feature Summary
- Engineered as a standard avalanche rectifier capable of withstanding inductive load switching energy without failure.
- Constructed using silicon planar technology to ensure robust performance across extreme thermal environments.
- Available in non-RoHS tin/lead plating configurations alongside RoHS-compliant variants.
Applications
- High-voltage power supply rectification circuits requiring avalanche ruggedness.
- Inductive load switching protection where transient energy absorption is critical.
- Military and aerospace electronic systems adhering to MIL-PRF-19500 screening standards.
Procurement Notes
Verify the specific ordering suffix when purchasing, as the base part number may be available in both standard tin/lead and lead-free (PBFREE) configurations. Confirm that the selected variant meets the required environmental compliance standards for the target assembly process. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability.
Selection Notes
Select this component for designs requiring a 1 A continuous current rating with a 1000 V blocking capability. The wide operating temperature range up to +200°C makes it suitable for harsh industrial or automotive environments. Consider the physical dimensions of the DO-41 package for PCB layout constraints and verify thermal management requirements for the specific mounting orientation.
Part Context
This component belongs to the 1N5059 through 1N5062 series of standard avalanche diodes manufactured by Central Semiconductor Corp. These devices are characterized by their ability to handle repetitive avalanche currents, distinguishing them from standard recovery rectifiers. The series is widely utilized in applications demanding high reliability and proven silicon planar construction.
Replacement Considerations
Direct replacements must match the 1000 V reverse voltage, 1 A average forward current, and DO-41 package form factor. Verify that substitute components also support the required avalanche energy ratings and operate within the specified -65°C to +200°C temperature range to maintain circuit integrity.
