2N5061 APM TIN/LEAD

Overview

The 2N5061 APM TIN/LEAD is a silicon planar epitaxial mesa power transistor manufactured by Central Semiconductor Corp. It features a PNP configuration housed in a TO-220AB (TO-220) through-hole package with three leads. The device supports a maximum collector-emitter voltage of 80 V and a continuous collector current of 3 A. Key electrical parameters include a DC current gain (hFE) ranging from 20 to 70 at specified test conditions, a collector-base breakdown voltage of 90 V, and an emitter-base breakdown voltage of 10 V. Thermal characteristics specify a maximum junction temperature of 200°C and a total power dissipation of 40 W when mounted on an insulated heat sink. The component operates within a junction temperature range of -65°C to +200°C.

Feature Summary

• High power handling capability with 40 W dissipation rating for robust thermal performance
• Wide operating temperature range extending up to 200°C junction temperature
• Silicon planar epitaxial mesa construction for reliable high-voltage operation
• Through-hole TO-220AB packaging facilitates easy mounting on insulated heat sinks

Applications

• High-power linear regulation circuits requiring stable voltage control
• Audio amplifier output stages demanding high current drive capabilities
• Industrial motor control systems utilizing PNP switching configurations
• Power supply designs incorporating series pass transistor architectures

Procurement Notes

Verify the specific suffix APM indicates the Ammo Pack packaging format as documented by the manufacturer. Confirm that the TIN/LEAD designation aligns with RoHS exemption requirements if leaded components are necessary for your application. Cross-reference the datasheet revision date to ensure compatibility with your design specifications. Contact the manufacturer or authorized distributors directly for current availability status since stock levels fluctuate. Ensure proper heat sinking infrastructure is planned given the 40 W power dissipation rating.

Selection Notes

Select this component when designing circuits requiring a PNP power transistor with 3 A continuous current capacity. Compare the 80 V collector-emitter voltage against your circuit's maximum operating voltage to ensure adequate safety margins. Evaluate the thermal resistance characteristics relative to your available heat sinking solutions. Consider the hFE variation between 20 and 70 for biasing stability in linear applications. Verify that the TO-220AB package dimensions fit your PCB layout constraints.

Part Context

The 2N5061 belongs to the family of general-purpose high-power NPN/PNP transistors widely used in industrial and consumer electronics. Central Semiconductor Corp produces this device using silicon planar technology, distinguishing it from older mesa structures. The part serves as a direct replacement for legacy military-grade equivalents in modern commercial designs. Its TO-220AB package remains a standard form factor for medium-to-high power discrete semiconductor applications.

Replacement Considerations

Publicly confirmed substitute part numbers include the 2N5060 (NPN counterpart) for complementary pair designs. Other equivalent devices may include the 2N3055 family variants if polarity inversion is acceptable. Verify pinout compatibility before substitution as package variations exist among manufacturers. Consult official datasheets for thermal and electrical parameter matching to ensure circuit integrity.