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The 2N5062 TIN/LEAD is a Silicon Controlled Rectifier (SCR) manufactured by Central Semiconductor Corp. It features a maximum RMS on-state current of 0.8 A and supports repetitive peak off-state voltages ranging from 15 V to 200 V. The device utilizes a sensitive gate architecture, requiring a gate trigger voltage of 800 mV and a gate trigger current of 200 µA for activation. It is housed in a TO-92-3 through-hole package with a maximum power dissipation of 1.5 W. The component operates within a junction temperature range of -65°C to +150°C and complies with RoHS3 standards.
Verify the specific voltage rating variant required, as the 2N5062 series covers multiple breakdown levels. Confirm the TIN/LEAD suffix availability directly with the manufacturer or authorized distributors, as this plating option may have limited stock compared to lead-free alternatives. Ensure the selected part matches the exact voltage class needed for the target circuit design.
Select the 2N5062 when a compact, low-current SCR is needed for sensitive gate triggering. Compare the specific voltage rating against the circuit's peak reverse voltage requirements. Consider the TO-92-3 package constraints for thermal management and board space. Verify that the 0.8 A RMS current capacity meets the load demands without exceeding the device's limits.
This component belongs to the 2N506x family of silicon controlled rectifiers produced by Central Semiconductor Corp. These devices are designed for general-purpose switching and rectification in low-to-medium power applications. The family shares similar physical packaging and electrical characteristics, differing primarily in their voltage blocking capabilities.
Publicly confirmed parameter-equivalent substitutes include the 2N5064 PBFREE and 2N5064 TIN/LEAD from Central Semiconductor Corp.