SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N5062G is a silicon NPN general-purpose bipolar junction transistor (BJT) designed for low-power switching and amplification applications. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 30 V. The device operates within a temperature range of -55°C to +150°C and dissipates up to 625 mW of power. Packaged in a TO-92-3 through-hole configuration, it offers a minimum DC current gain (hFE) of 300 and a transition frequency of 50 MHz.
Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the TO-92-3 package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the 625 mW power dissipation limit under expected operating conditions.
Select this component when a high-gain NPN transistor is required for low-current applications. Compare the 30 V collector-emitter voltage against circuit supply rails to ensure adequate headroom. Verify that the 50 MHz transition frequency meets the bandwidth requirements of the intended signal path.
This part belongs to the 2N5088 series family, sharing similar electrical characteristics and package types. It serves as a standard discrete semiconductor solution for basic analog and digital logic interfacing tasks where moderate gain and low power consumption are prioritized over high-speed switching capabilities.
Check for direct cross-reference equivalents such as the 2N5088BU which shares identical pinouts and key electrical parameters. Ensure any substitute maintains the same TO-92-3 package form factor and meets the minimum hFE requirements of the original design.