2N5062G

2N5062G

  • Description:SCR 100V 800MA TO92-3
  • Series:-

SKU:4d75bdaffa3f Category: Brand:

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Product Detailed Parameters

  • Description:SCR 100V 800MA TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Voltage - Off State:100 V
  • Voltage - Gate Trigger (Vgt) (Max):800 mV
  • Current - Gate Trigger (Igt) (Max):200 µA
  • Current - Hold (Ih) (Max):5 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm):10A @ 60Hz
  • SCR Type:Sensitive Gate
  • Operating Temperature:-40°C ~ 110°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Voltage - On State (Vtm) (Max):1.7 V
  • Current - On State (It (AV)) (Max):510 mA
  • Current - On State (It (RMS)) (Max):800 mA
  • Current - Off State (Max):10 µA

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2N5062G

Overview

The onsemi 2N5062G is a silicon NPN general-purpose bipolar junction transistor (BJT) designed for low-power switching and amplification applications. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 30 V. The device operates within a temperature range of -55°C to +150°C and dissipates up to 625 mW of power. Packaged in a TO-92-3 through-hole configuration, it offers a minimum DC current gain (hFE) of 300 and a transition frequency of 50 MHz.

Feature Summary

  • High DC current gain suitable for sensitive signal amplification
  • Wide operating temperature range for robust environmental performance
  • Standard through-hole mounting for easy integration

Applications

  • General purpose switching circuits
  • Low-frequency amplification stages
  • Signal processing modules

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the TO-92-3 package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the 625 mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a high-gain NPN transistor is required for low-current applications. Compare the 30 V collector-emitter voltage against circuit supply rails to ensure adequate headroom. Verify that the 50 MHz transition frequency meets the bandwidth requirements of the intended signal path.

Part Context

This part belongs to the 2N5088 series family, sharing similar electrical characteristics and package types. It serves as a standard discrete semiconductor solution for basic analog and digital logic interfacing tasks where moderate gain and low power consumption are prioritized over high-speed switching capabilities.

Replacement Considerations

Check for direct cross-reference equivalents such as the 2N5088BU which shares identical pinouts and key electrical parameters. Ensure any substitute maintains the same TO-92-3 package form factor and meets the minimum hFE requirements of the original design.

2N5062G2N5062G

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