2N5302G

Overview

The onsemi 2N5302G is a high-power NPN silicon transistor designed for robust switching and amplification applications. It features a collector-emitter voltage rating of 60 V and supports a continuous collector current of up to 20 A. The device utilizes a TO-3 metal flange mount package, providing efficient thermal dissipation with a maximum power dissipation capacity of 125 W at case temperature. Qualified under MIL-PRF-19500/456 standards, it ensures reliability in demanding environments with an operating junction temperature range extending from -55°C to +175°C.

Feature Summary

• High power handling capability suitable for heavy-duty industrial loads
• Military-grade qualification ensuring strict performance consistency
• Robust metal flange construction for superior heat management

Applications

• Industrial motor control systems requiring high current switching
• Power supply output stages in regulated DC converters
• Automotive ignition circuits and high-load actuation drivers

Procurement Notes

Verify the specific suffix G against the manufacturer's datasheet to confirm exact electrical tolerances and testing criteria. Confirm RoHS compliance status as military variants may differ from commercial equivalents. Validate that the TO-3 package dimensions match the target chassis mounting requirements before finalizing procurement orders.

Selection Notes

Select this component when high current capacity and ruggedness are prioritized over compact form factors. The TO-3 package necessitates dedicated heatsinking solutions compared to surface-mount alternatives. Ensure the driving circuit can provide sufficient base current to saturate the transistor effectively at the required load levels.

Part Context

This part belongs to the legacy high-power bipolar junction transistor family originally standardized for military specifications. It serves as a direct replacement for older MIL-SPEC components in retrofitted equipment. The 2N5302 designation identifies the core NPN structure, while the G suffix typically denotes specific manufacturing lot or testing variations defined by onsemi.

Replacement Considerations

Direct substitutes include the 2N5303 for complementary PNP configurations or equivalent military-spec NPN transistors in TO-3 packages. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' high-power BJT offerings.