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The Central Semiconductor Corp 2N5303 PBFREE is a silicon NPN power transistor housed in a TO-3 flange mount package. It supports a maximum collector current of 20 A and dissipates up to 200 W of power. The device features an 80 V collector-emitter breakdown voltage (BVCEO) and an 80 V collector-base breakdown voltage (BVCBO). Minimum DC current gain (hFE) is specified at 15 when tested at a collector current of 10 A. The saturation voltage (VCE(SAT)) is rated at a maximum of 2.0 V under the same test conditions.
Verify component authenticity by matching the manufacturer part number against official datasheets. Confirm that the ordering suffix indicates lead-free plating status as required by project specifications. Ensure the physical package matches the TO-3 mechanical drawing dimensions before integration into the assembly process.
Select this component for designs requiring high collector current handling within a metal can package. Evaluate thermal resistance requirements carefully due to the 200 W power dissipation rating. Compare the 80 V breakdown voltage against circuit operating limits to ensure adequate safety margins during transient events.
This device belongs to the Central Semiconductor power transistor portfolio, designed for heavy-duty applications. It utilizes a standard TO-3 case style which provides electrical isolation between the collector and the mounting hardware. The product line emphasizes reliability in industrial environments through rigorous material composition controls.
Central Semiconductor has classified the 2N5303 as End of Life (EOL) per notice PDN01250. No suggested replacement part numbers are provided in the official discontinuation documentation.