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Product Detailed Parameters
- Description：300MA 40V TH TRANSISTOR-SMALL SI
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1.4V @ 200µA, 200mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：7000 @ 2mA, 5V
- Power - Max：-
- Frequency - Transition：60MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5308 TIN/LEAD is a single NPN Darlington transistor housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) rating of 12 V. The device supports a maximum DC collector current of 500 mA and a continuous collector current of 300 mA. Power dissipation is rated at 1.5 W. The minimum DC current gain (hFE) is 7000 at 5 V and 2 mA. The transition frequency (fT) is 60 MHz. Operating temperatures range from -65 °C to +150 °C.
Feature Summary
- High DC current gain for effective signal amplification
- Robust thermal performance suitable for high-temperature environments
- Through-hole construction for standard PCB mounting
Applications
- General-purpose switching circuits
- Low-power amplifier stages
- Driver applications requiring high input impedance
Procurement Notes
Verify the specific tin/lead plating designation when ordering, as lead-free variants exist under similar part numbers. Confirm RoHS compliance status if restricted substances are prohibited in your assembly process. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Check for availability of the ammo pack packaging format specified in official documentation.
Selection Notes
Select this component when a high-gain NPN Darlington configuration is required in a TO-92-3 package. The 40 V voltage rating limits suitability for higher voltage applications. Consider the 1.5 W power dissipation capability relative to thermal management constraints. Verify that the 300 mA continuous current rating meets the load requirements of the target circuit design.
Part Context
This component belongs to the 2N5308 series of NPN Darlington transistors manufactured by Central Semiconductor. The series offers variations in packaging and environmental compliance, such as lead-free options. The TO-92-3 form factor is common for low-to-medium power discrete semiconductor devices used in consumer and industrial electronics.
Replacement Considerations
Equivalent parts include MPS5308 and 2N5308 variants from other manufacturers. Verify pinout compatibility and electrical parameter alignment before substitution.
