2N5321 TIN/LEAD

2N5321 TIN/LEAD

$1.51
  • Description:50V 2A 10W TH TRANSISTOR-BIPOLAR
  • Series:-

SKU:4a794564ec5d Category: Brand:

  
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Product Detailed Parameters

  • Description:50V 2A 10W TH TRANSISTOR-BIPOLAR
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):500µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA, 4V
  • Power - Max:10 W
  • Frequency - Transition:50MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

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2N5321 TIN/LEAD

Overview

The 2N5321 TIN/LEAD is an NPN silicon small-signal transistor manufactured by Central Semiconductor Corp. It utilizes a TO-5 metal can package with wire terminals and a collector-connected case. The device supports a maximum collector current of 4 A and a collector-emitter voltage of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 50 MHz. The component is rated for operation up to a junction temperature of 175 °C.

Feature Summary

  • High current handling capability suitable for power switching applications
  • Robust metal TO-5 construction providing thermal stability
  • Defined high-frequency response for signal processing

Applications

  • General purpose small-signal amplification
  • Low-power switching circuits
  • Industrial control modules

Procurement Notes

Verify the specific manufacturer source, as multiple entities including Intersil and Continental Device India Limited have produced this part number. Confirm terminal plating specifications match project requirements. Ensure the TO-5 package dimensions align with existing board layouts. Validate RoHS compliance status against current regulatory needs before finalizing procurement.

Selection Notes

Select this component when high collector current capacity is required in a hermetic metal package. The TO-5 form factor offers superior heat dissipation compared to plastic equivalents. Verify that the 50 V breakdown voltage meets circuit safety margins. Consider the 50 MHz transition frequency for bandwidth limitations in high-speed designs.

Part Context

This transistor belongs to the standard NPN silicon small-signal family. It serves as a discrete semiconductor solution for analog and digital switching tasks. The TO-5 package is a legacy industrial standard often used in military or high-reliability environments where hermetic sealing is critical for long-term performance.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other manufacturers producing the 2N5321 specification only if pinout and electrical parameters are verified identical.

2N5321 TIN/LEAD2N5321 TIN/LEAD
$1.51
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