2N5323

Overview

The Microchip Technology 2N5323 is a single-element PNP silicon small signal bipolar junction transistor (BJT). It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. The device has a minimum DC current gain (hFE) of 40. It is housed in a cylindrical metal TO-5 package with three pins, designed for through-hole mounting.

Feature Summary

• PNP silicon construction for reliable switching performance
• Robust 2 A continuous collector current capability
• Metal can packaging providing thermal stability

Applications

• General purpose switching circuits
• Amplifier stages requiring PNP topology
• Industrial control systems utilizing through-hole components

Procurement Notes

Verify the specific manufacturer source, as historical data indicates production by Microsemi or CDIL under the same part number. Confirm RoHS compliance status, as older variants may be leaded. Check current availability from authorized distributors, noting that long delivery times are frequently reported for this component family.

Selection Notes

Select this component when a PNP BJT with 2 A current handling and 50 V voltage rating is required. Ensure the design accommodates the TO-5 cylindrical metal package dimensions. Verify that the application does not require lead-free compliance if sourcing legacy stock, as specifications indicate non-RoHS options exist.

Part Context

This part belongs to the standard military-style transistor numbering system. It is functionally related to the 2N5321 NPN counterpart within the same series. The component is categorized under discrete semiconductors and general-purpose small signal transistors manufactured by Microchip Technology subsidiaries.

Replacement Considerations

• 2N5321