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The 2N5323 TIN/LEAD is a small signal PNP silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. The device utilizes a TO-5 cylindrical metal package with three pins, designed for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 40. The component operates within a temperature range defined by its construction, suitable for general-purpose switching and amplification applications in electronic circuits.
Verify the TIN/LEAD suffix confirms leaded plating compliance if required by specific assembly standards. Confirm RoHS status as the base part may not be compliant. Check manufacturer documentation for exact thermal resistance values and pinout configurations before integration into PCB layouts to ensure correct orientation during installation.
Select this component when a high-current PNP transistor in a hermetic metal package is required. Compare against plastic packaged alternatives if cost or volume constraints exist. Ensure the 50 V rating exceeds the maximum circuit voltage. Verify that the TO-5 footprint matches existing board space and mounting hardware requirements for legacy or high-reliability systems.
This part belongs to the standard military-style transistor numbering system, often used in aerospace and defense applications. Central Semiconductor produces variants with different plating options. The TO-5 package offers superior heat dissipation compared to plastic equivalents like TO-92, making it suitable for higher power density environments where reliability is critical.
Direct substitutes must match the PNP type, 2 A current rating, and TO-5 package. Verify pinout compatibility as variations exist between manufacturers. Check datasheets for equivalent hFE ranges and breakdown voltages to ensure functional parity in the target circuit design.