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Product Detailed Parameters
- Description：TRANS NPN 60V 3A TO-5AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：6 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AA, TO-5-3 Metal Can
- Supplier Device Package：TO-5AA
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5334 is a small signal NPN silicon bipolar junction transistor housed in a TO-39 metal can package. It features a maximum collector current of 3 A and a collector-emitter breakdown voltage of 60 V. The device has a minimum DC current gain (hFE) of 30. It is a single-element component with three terminals, designed for through-hole mounting.
Feature Summary
- Utilizes NPN silicon construction for reliable switching and amplification
- Encapsulated in a durable metal TO-39 cylindrical package
- Supports high collector current handling capabilities
Applications
- General-purpose switching circuits
- Amplifier stages requiring moderate current drive
- Industrial control logic interfaces
Procurement Notes
Verify the specific revision level against the manufacturer's latest Product Change Notification (PCN) dated January 23, 2024. Confirm RoHS compliance status as the datasheet indicates non-compliance. Ensure the TO-39 pinout matches the target PCB footprint before integration into the design.
Selection Notes
Select this component when a robust NPN transistor with a 60 V rating and 3 A continuous current capacity is required. The TO-39 package offers superior thermal dissipation compared to plastic equivalents. Consider the minimum hFE of 30 when designing base drive circuits to ensure saturation or active region operation meets system requirements.
Part Context
This part belongs to the standard NPN bipolar transistor family from Microchip Technology. It shares the TO-39 form factor with other high-reliability discrete semiconductors in the portfolio. The device serves as a fundamental building block for power management and signal processing applications where metal-can durability is preferred.
Replacement Considerations
Consult official substitution lists for equivalent NPN transistors with matching 60 V V(BR)CEO and 3 A I(C) ratings. Verify that any alternative maintains the TO-39 mechanical dimensions and electrical characteristics defined in the original datasheet.
