2N5356 APM PBFREE

2N5356 APM PBFREE

$0.49
  • Description:25V 350MA 360MW TH TRANSISTOR-SM
  • Series:-

SKU:de6fe423dc83 Category: Brand:

  
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Product Detailed Parameters

  • Description:25V 350MA 360MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):350 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 30mA, 300mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 50mA, 1V
  • Power - Max:360 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5356 APM PBFREE

Overview

The 2N5356 APM PBFREE is a PNP bipolar junction transistor (BJT) manufactured by Central Semiconductor. It is designed for general-purpose switching and amplification applications in through-hole configurations. The device utilizes silicon technology and features a TO-92-3 package. Key electrical characteristics include a maximum collector-emitter voltage of 40V, a maximum collector-base voltage of 40V, and an emitter-base voltage of 4V. The component supports a continuous DC collector current of 300 mA with a power dissipation rating of 625 mW. It offers a minimum DC current gain (hFE) of 100 and a maximum of 300, with a transition frequency of 250 MHz. Operating temperatures range from -65°C to +150°C.

Feature Summary

  • PNP polarity configuration suitable for low-noise and general-purpose amplification tasks
  • High thermal stability with a maximum operating temperature of +150°C
  • Robust mechanical construction in a standard TO-92-3 through-hole package

Applications

  • General-purpose signal amplification circuits
  • Low-noise audio pre-amplifier stages
  • Electronic switching applications requiring moderate current handling

Procurement Notes

Verify the specific datasheet version for the 2N5356 APM PBFREE before integration, as Central Semiconductor product specifications may undergo revisions. Confirm that the TO-92-3 package dimensions align with your PCB footprint requirements. Ensure that the thermal management design accommodates the 625 mW power dissipation limit under worst-case operating conditions. Cross-reference the hFE binning requirements with your circuit's gain tolerance needs to ensure consistent performance across production batches.

Selection Notes

Select this component when a PNP silicon BJT with a 40V voltage rating and 300mA current capability is required. The TO-92-3 package makes it suitable for prototyping and through-hole manufacturing processes. Consider the 250 MHz transition frequency if high-speed switching or RF amplification is needed within the specified voltage limits. Compare against other PNP transistors in the same family if higher current or different packaging options are necessary for the final application.

Part Context

The 2N5356 belongs to the 2N53 series of discrete semiconductors produced by Central Semiconductor. This series focuses on providing reliable, cost-effective solutions for standard electronic components. The manufacturer emphasizes quality control and compliance with environmental standards, such as Pb-Free soldering profiles. The part is part of a broader portfolio that includes various diodes, transistors, and protection devices designed for industrial and commercial electronics.

Replacement Considerations

Direct substitutes should be sought among other PNP transistors with identical pinouts and comparable electrical ratings (40V VCEO, 300mA IC). Verify that any replacement maintains the same TO-92-3 package form factor to ensure mechanical compatibility. Check datasheets for equivalent hFE ranges and transition frequencies to guarantee functional parity in sensitive amplifier or switching circuits.

2N5356 APM PBFREE2N5356 APM PBFREE
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