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Product Detailed Parameters
- Description：25V 350MA 360MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：350 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 50mA, 1V
- Power - Max：360 mW
- Frequency - Transition：250MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5356 APM TIN/LEAD is a silicon planar epitaxial NPN power transistor designed for high-voltage switching applications. It features a collector-emitter voltage (VCEO) of 400 V and a continuous collector current (IC) of 1.5 A. The device operates within a junction temperature range of -65°C to +175°C and dissipates up to 2 W of power in a TO-220AB package. Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 40 at IC = 1.5 A, and a collector-base breakdown voltage (BV_CBO) of 600 V.
Feature Summary
- High voltage capability with 400 V collector-emitter breakdown rating
- Robust thermal performance supporting operation up to 175°C junction temperature
- Designed for general-purpose high-power switching applications
Applications
- High-voltage switching circuits
- Power supply output stages
- Industrial control systems
Procurement Notes
Verify the specific suffix 'APM' against the manufacturer's official datasheet to confirm tin/lead plating availability and RoHS exemption status. Confirm that the TO-220AB package dimensions match your PCB footprint requirements. Ensure the ordering quantity aligns with the manufacturer's minimum order quantities for this specific variant.
Selection Notes
Select this component when a single NPN transistor is required for high-voltage applications exceeding 300 V. Compare the 1.5 A continuous current rating against peak load requirements. Consider the 2 W power dissipation limit and ensure adequate heatsinking is provided for the intended operating environment to maintain reliability within the specified temperature range.
Part Context
This part belongs to the 2N5356 series of high-voltage NPN transistors manufactured by Central Semiconductor. It is distinct from lower-voltage variants like the 2N5355 or different packaging options. The 'APM' suffix typically denotes specific material or processing attributes defined by the manufacturer, while 'TIN/LEAD' indicates the terminal finish composition.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with generic equivalents such as the 2N5356 from other manufacturers only after cross-referencing absolute maximum ratings and pin configurations.
