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The Central Semiconductor Corp 2N5367 PBFREE is a silicon PNP epitaxial planar bipolar junction transistor (BJT) designed for general-purpose switching and amplifier applications. It features a collector-emitter voltage rating of 40V, a continuous collector current capacity of 300mA, and a power dissipation limit of 625mW. The device exhibits a gain bandwidth product (fT) of 250MHz, supporting high-frequency operations. It operates within a temperature range of -65°C to +150°C TJ and utilizes a TO-92-3 through-hole package.
Verify the specific ordering suffix against official Central Semiconductor documentation to confirm lead-free compliance and packaging configuration. Ensure that the selected variant matches the required thermal characteristics and pinout specifications for the intended PCB layout. Cross-reference datasheet parameters with system requirements prior to finalizing procurement orders.
Select this component when a PNP transistor with moderate current handling and high-speed switching capabilities is required. The 40V breakdown voltage and 300mA current rating suit low-to-medium power applications. Consider the TO-92-3 package constraints for thermal management and board space availability during the design phase.
This part belongs to the Central Semiconductor 2N536x series of PNP transistors. It shares structural similarities with the 2N5366 but differs in specific electrical ratings. The series targets cost-effective solutions for consumer electronics and industrial control systems requiring standard small-signal performance.
Direct substitutes include the 2N5366 if electrical ratings align with application needs. Verify pin compatibility and thermal resistance values before implementing any alternative components from different manufacturers.