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The Central Semiconductor Corp 2N5375 TRE PBFREE is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 30 V. The device supports a power dissipation of 360 mW and has a transition frequency of 150 MHz. DC current gain ranges from 40 to 300, with a minimum of 40 specified at 150 mA and 10 V. Operating temperatures span from -65°C to +150°C.
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status and packaging type. Ensure the requested variant matches the required electrical tolerances and thermal characteristics. Confirm availability through authorized distributors as production cycles may vary. Cross-reference datasheet parameters with design requirements before finalizing procurement orders.
Select this component for designs requiring a PNP transistor with 500 mA current capacity and 30 V voltage rating. The TO-92-3 package suits through-hole PCB layouts. Evaluate thermal management needs given the 360 mW power dissipation limit. Consider the 150 MHz transition frequency for bandwidth requirements. Verify gain specifications meet circuit sensitivity needs.
This part belongs to the Central Semiconductor 2N53 series of small-signal transistors. It complements other devices in the lineup offering similar PNP configurations. The series targets general electronic applications requiring reliable through-hole components. Central Semiconductor manufactures these silicon-based devices for industrial and commercial use.
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