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Product Detailed Parameters
- Description：TRANS NPN 300V 7A TO-61
- Series：-
- Mfr：General Semiconductor
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：7:00 AM
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：175 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package：TO-61
- Grade：-
- Qualification：-
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Overview
The General Semiconductor 2N5389 is a high-power NPN silicon transistor designed for demanding switching and amplification applications. It features a single configuration with a maximum collector current of 70 A and a minimum DC current gain (hFE) of 20. The device is supplied as a bare die, requiring integration into custom packaging or direct mounting solutions. Its robust electrical characteristics support operation in environments requiring significant current handling capabilities.
Feature Summary
- High current handling capability suitable for power switching applications
- Single NPN configuration for straightforward circuit integration
- Bare die format allowing flexible thermal management and packaging options
Applications
- High-current power switching circuits
- Industrial motor control systems
- Power amplifier stages
Procurement Notes
Verify the specific manufacturer source, as General Semiconductor assets are often managed by other entities. Confirm the bare die condition and required handling procedures. Ensure compatibility with your chosen packaging or direct-mounting infrastructure. Request detailed datasheets for absolute maximum ratings and thermal resistance values to validate design margins.
Selection Notes
Select this component when high collector current capacity is critical. The bare die format necessitates careful consideration of thermal dissipation and mechanical mounting. Verify that the minimum hFE of 20 meets your drive requirements. Compare against packaged alternatives if ease of assembly is a priority over raw performance density.
Part Context
This part belongs to the broader category of discrete semiconductor transistors. It is distinct from integrated circuits and diodes due to its three-terminal active switching nature. The bare die form factor places it in a specialized segment of the market, differing from standard through-hole or surface-mount packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate equivalent high-current NPN bare dies based on matching collector current, voltage ratings, and package compatibility.
