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Product Detailed Parameters
- Description：TRANS PNP 150V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5401 is a PNP silicon amplifier transistor housed in a TO-92 package. It supports a collector-emitter voltage of 150 Vdc and a continuous collector current of 600 mAdc. The device dissipates up to 625 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 200 °C/W. Operating temperatures range from -55°C to +150°C. DC current gain (hFE) ranges from 30 to 180 depending on the collector current. The transition frequency (fT) reaches 400 MHz.
Feature Summary
- PNP silicon construction for general-purpose amplification
- High collector-emitter breakdown voltage capability
- Low noise figure suitable for sensitive signal applications
- Wide operating temperature range for harsh environments
Applications
- Amplifier circuits
- Switching applications
- Oscillators
- Current mirror configurations
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and lead-free status. Confirm that the component meets RoHS requirements if applicable to your assembly process. Ensure the selected variant matches the required shipping configuration, such as bulk or tape and reel, prior to procurement.
Selection Notes
Select this component when a PNP transistor with a 150 V collector-emitter rating is required. Consider the 600 mA continuous current limit and 625 mW power dissipation constraints during thermal design. Evaluate the hFE range and fT specifications to ensure compatibility with the intended signal bandwidth and gain requirements.
Part Context
This component belongs to the 2N540x series of preferred devices manufactured by onsemi. It shares characteristics with the 2N5400 NPN counterpart but utilizes PNP polarity. The device is designed for use in standard through-hole applications within the TO-92 form factor, providing a reliable solution for discrete semiconductor needs.
Replacement Considerations
Direct substitutes include the 2N5400G and 2N5401G for lead-free versions. Variants such as 2N5401RLRA and 2N5401RLRM offer different packaging options like tape and reel or ammo box while maintaining identical electrical performance.
FAQ
What is the pinout configuration for the 2N5401?
With the flat side facing forward and leads pointing down, Pin 1 is the Emitter, Pin 2 is the Base, and Pin 3 is the Collector.
Does the 2N5401 support lead-free packaging?
Yes, lead-free packages are available, typically identified by the 'G' suffix in the part number, such as 2N5401G.
What is the maximum power dissipation at case temperature?
The total device dissipation is 1.5 Watts when the case temperature is maintained at 25°C.
