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Product Detailed Parameters
- Description：150V 600MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：1.5 W
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5401 APM PBFREE is a silicon PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage of 150 V and a collector-base voltage of 160 V, with an emitter-base breakdown voltage of 5 V. The device supports a continuous DC collector current of 600 mA and dissipates up to 625 mW of power. Its transition frequency is rated at 300 MHz, and it operates within a temperature range of -65°C to +150°C.
Feature Summary
- PNP polarity configuration suitable for general-purpose switching and amplification applications.
Applications
- General-purpose electronic circuits requiring PNP switching or amplification.
Procurement Notes
Verify the exact suffix against official manufacturer documentation, as standard listings typically use APP or TIN/LEAD designations rather than APM. Confirm RoHS compliance status and lead-free plating specifications directly with the supplier to ensure alignment with project requirements before finalizing procurement orders.
Selection Notes
Select this component when a PNP BJT with 150V collector-emitter voltage and 600mA current capacity is required in a TO-92-3 package. Ensure the application environment remains within the specified -65°C to +150°C operating temperature range and does not exceed the 625mW power dissipation limit without adequate thermal management.
Part Context
This part belongs to the 2N5401 series of silicon PNP transistors manufactured by Central Semiconductor Corp. The series includes variants such as 2N5401 APP PBFREE and 2N5401 APP TIN/LEAD, which share identical electrical characteristics but differ in packaging and plating options. These devices are standard discrete semiconductors used in various electronic assemblies.
Replacement Considerations
Publicly confirmed substitute part numbers for the 2N5401 APM PBFREE variant are not available in the provided source material. Verify compatibility with other 2N5401 series components based on matching electrical parameters and package dimensions.
