2N5401_D81Z

$0.04

Description：TRANS PNP 150V 0.6A TO-92-3
Series：-

SKU:0016205e445b Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 150V 0.6A TO-92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：400MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5401_D81Z

Overview

The onsemi 2N5401_D81Z is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a collector-emitter voltage of -150 V and a collector current of -600 mA, with a maximum power dissipation of 625 mW at 25°C ambient temperature. The device features a collector-base breakdown voltage of -160 V and an emitter-base breakdown voltage of -5 V. Electrical characteristics include a DC current gain ranging from 30 to 240 depending on the operating point, a transition frequency up to 400 MHz, and a noise figure of 8 dB.

Feature Summary

PNP epitaxial silicon construction for amplifier applications
High collector-emitter voltage rating of 150 V
Transition frequency reaching 400 MHz
Low noise figure suitable for sensitive circuits

Applications

Amplifier circuits
Switching applications
General-purpose small signal processing

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout configuration and packaging details. Ensure that the component meets all absolute maximum ratings during operation to prevent damage. Cross-reference datasheet revisions to confirm electrical parameters remain consistent with design requirements.

Selection Notes

Select this component when a PNP transistor with high voltage capability and moderate current handling is required. Consider the thermal resistance and power dissipation limits relative to the expected operating environment. Evaluate the noise figure and bandwidth specifications against the specific signal processing needs of the target application.

Part Context

This part belongs to the 2N5401 family of PNP transistors originally documented by Fairchild Semiconductor, now managed by onsemi. The device is designed as a general-purpose amplifier transistor offering reliable performance in standard electronic circuits. It utilizes a three-terminal TO-92 through-hole package for easy integration into printed circuit boards.