2N5401BU

Overview

The onsemi 2N5401BU is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a collector current of -600 mA and withstands a collector-emitter voltage of -150 V. The device dissipates up to 625 mW at 25°C, with a junction temperature limit of 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 240, a transition frequency (fT) between 100 MHz and 400 MHz, and a collector-base breakdown voltage of -160 V.

Feature Summary

• PNP epitaxial silicon construction for reliable switching and amplification
• High collector-emitter voltage rating suitable for general-purpose applications
• Low saturation voltage for efficient power handling
• Wide DC current gain range across multiple operating currents

Applications

• General-purpose amplifier circuits
• Switching applications requiring high voltage tolerance
• Audio signal processing stages

Procurement Notes

Verify the specific suffix against official documentation to confirm pinout configuration and electrical tolerances. Ensure the component meets RoHS compliance requirements if applicable to your assembly process. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement specifications.

Selection Notes

Select this component when a PNP transistor with a minimum 150V collector-emitter breakdown is required. Consider the 600mA continuous current limit and 625mW thermal dissipation constraints during circuit design. Verify that the hFE range aligns with the biasing requirements of the target application stage.

Part Context

This part belongs to the 2N5401 series of small-signal PNP transistors originally developed by Fairchild Semiconductor. The series is widely recognized for its robustness in standard through-hole packages. The BU designation typically indicates a specific binning or packaging variant within the broader product family.

Replacement Considerations

Direct substitutes include the 2N5401YBU from onsemi. Verify pinout compatibility and thermal resistance values when transitioning between manufacturers to ensure circuit performance remains within specified limits.