2N5401TF

2N5401TF

  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-

SKU:4fbc65c7177a Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:400MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5401TF

Overview

The onsemi 2N5401TF is a PNP epitaxial silicon general-purpose transistor housed in a TO-92-3 through-hole package. It supports a collector-emitter voltage of -150 V and a continuous collector current of -600 mA, with a maximum power dissipation of 625 mW at 25°C ambient temperature. The device features a collector-base breakdown voltage of -160 V and an emitter-base voltage rating of -5 V. Electrical characteristics include a DC current gain ranging from 30 to 240 depending on the operating point, a transition frequency up to 400 MHz, and a noise figure of 8 dB.

Feature Summary

  • PNP polarity configuration for standard signal amplification and switching applications
  • High voltage tolerance suitable for circuits requiring significant collector-emitter potential differences
  • Low noise performance optimized for sensitive analog front-end stages
  • Robust thermal management capabilities within specified junction temperature limits

Applications

  • General purpose amplifier circuits
  • Signal switching logic interfaces
  • Low noise preamplifier stages
  • Current mirror configurations

Procurement Notes

Verify the specific suffix 'TF' against official manufacturer documentation to confirm packaging type and reel specifications. Ensure the component meets RoHS compliance requirements if mandated by the design. Cross-reference the datasheet revision date to validate electrical parameters against current production standards. Confirm lead frame material and pinout orientation match the target PCB footprint before finalizing procurement orders.

Selection Notes

Select this component when circuit designs require high voltage handling capabilities combined with low noise characteristics. The TO-92 package is appropriate for through-hole assembly processes where space constraints are less critical than robust mechanical mounting. Evaluate the thermal resistance and power dissipation limits to ensure adequate heat sinking or airflow is available during continuous operation under maximum load conditions.

Part Context

This part belongs to the 2N5401 series of PNP bipolar junction transistors originally developed by Fairchild Semiconductor and now managed by onsemi following corporate acquisition. The series is widely recognized as a standard industry replacement for legacy NPN counterparts like the 2N4401 in complementary push-pull topologies. The TF suffix typically denotes a specific tape and reel packaging format intended for automated surface mount or through-hole insertion machinery.

Replacement Considerations

  • 2N5401YBU
  • 2N5401NLBU

FAQ

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCEO) is rated at -150 V.

Does the device support high-frequency operation?

Yes, the current gain bandwidth product (fT) reaches up to 400 MHz under specified test conditions.

What is the typical noise figure for this transistor?

The noise figure is specified at 8 dB when measured at a collector current of -250 µA and a source resistance of 1 kΩ.

2N5401TF2N5401TF

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