SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N5401TF is a PNP epitaxial silicon general-purpose transistor housed in a TO-92-3 through-hole package. It supports a collector-emitter voltage of -150 V and a continuous collector current of -600 mA, with a maximum power dissipation of 625 mW at 25°C ambient temperature. The device features a collector-base breakdown voltage of -160 V and an emitter-base voltage rating of -5 V. Electrical characteristics include a DC current gain ranging from 30 to 240 depending on the operating point, a transition frequency up to 400 MHz, and a noise figure of 8 dB.
Verify the specific suffix 'TF' against official manufacturer documentation to confirm packaging type and reel specifications. Ensure the component meets RoHS compliance requirements if mandated by the design. Cross-reference the datasheet revision date to validate electrical parameters against current production standards. Confirm lead frame material and pinout orientation match the target PCB footprint before finalizing procurement orders.
Select this component when circuit designs require high voltage handling capabilities combined with low noise characteristics. The TO-92 package is appropriate for through-hole assembly processes where space constraints are less critical than robust mechanical mounting. Evaluate the thermal resistance and power dissipation limits to ensure adequate heat sinking or airflow is available during continuous operation under maximum load conditions.
This part belongs to the 2N5401 series of PNP bipolar junction transistors originally developed by Fairchild Semiconductor and now managed by onsemi following corporate acquisition. The series is widely recognized as a standard industry replacement for legacy NPN counterparts like the 2N4401 in complementary push-pull topologies. The TF suffix typically denotes a specific tape and reel packaging format intended for automated surface mount or through-hole insertion machinery.
The absolute maximum collector-emitter voltage (VCEO) is rated at -150 V.
Yes, the current gain bandwidth product (fT) reaches up to 400 MHz under specified test conditions.
The noise figure is specified at 8 dB when measured at a collector current of -250 µA and a source resistance of 1 kΩ.