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The Microchip Technology 2N5405 is a small-signal PNP silicon transistor housed in a TO-5 metal can package. It is designed for general-purpose switching and amplification applications. Key electrical characteristics include a collector-emitter breakdown voltage (BVCEO) of 60 V, a collector-base breakdown voltage (BVCBO) of 80 V, and an emitter-base breakdown voltage (BVEBO) of 3 V. The device supports a maximum continuous collector current of 100 mA with a power dissipation rating of 625 mW at 25°C case temperature.
Verify the manufacturer origin carefully, as the 2N5405 specification originated from Semelab. Confirm that the specific lot or revision supplied by Microchip aligns with the required MIL-PRF-19500 standards if military qualification is mandated. Ensure the TO-5 package dimensions match the mechanical data provided in the official datasheet to prevent mounting issues.
Select this component when a ruggedized, hermetically sealed PNP transistor is required for high-reliability environments. The TO-5 package offers superior thermal performance compared to plastic packages. Consider the 60 V collector-emitter voltage limit and 100 mA current capability to ensure operation within safe limits for the intended circuit design.
The 2N5405 belongs to a family of small-signal PNP transistors historically produced by Semelab and now distributed by Microchip Technology. These devices are characterized by their use in military and aerospace-grade electronics where long-term stability and resistance to harsh conditions are critical requirements.
Public confirmed substitute part numbers: 2N5404, 2N5406, 2N5407.