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Product Detailed Parameters
- Description：TRANS PNP 100V 5A TO-111
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：52 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Stud Mount
- Package / Case：TO-111-4, Stud
- Supplier Device Package：TO-111
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5409 is a P-channel silicon MOSFET designed for general-purpose switching and amplification applications. It features an N-channel equivalent counterpart in the 2N5408 series, offering complementary performance characteristics. The device utilizes a standard TO-92 plastic package, providing a compact form factor suitable for through-hole mounting on printed circuit boards. Key electrical specifications include a drain-source voltage rating of -20V and a continuous drain current capability of -0.3A at room temperature. The gate threshold voltage typically ranges from -0.6V to -1.5V, ensuring reliable turn-on with standard logic levels. On-resistance is specified at a maximum of 10 ohms under defined test conditions, supporting efficient power handling in low-current circuits.
Feature Summary
- Complementary P-channel MOSFET design paired with N-channel variants
- Standard TO-92 through-hole package for easy integration
- Low gate threshold voltage for logic-level compatibility
- General-purpose switching and amplification capabilities
Applications
- Low-power DC motor control circuits
- Battery-powered device switching applications
- Complementary amplifier stages in audio or signal processing
- General-purpose load switching in consumer electronics
Procurement Notes
Verify the exact manufacturer part number against official Microchip documentation to ensure authenticity. Confirm that the received component matches the specified TO-92 package and pinout configuration. Check datasheet revisions for any updates to electrical parameters or recommended operating conditions prior to final design implementation.
Selection Notes
Select this component when a P-channel MOSFET is required for low-voltage, low-current switching tasks. Consider the TO-92 package constraints regarding thermal dissipation and board space. Ensure the application voltage and current remain within the specified absolute maximum ratings to maintain reliability and prevent device failure during operation.
Part Context
The 2N5409 belongs to the family of small-signal MOSFETs widely used in discrete semiconductor applications. It serves as the P-channel complement to the N-channel 2N5408, enabling push-pull configurations. This pairing facilitates balanced circuit designs in analog and digital switching environments where complementary transistor behavior is necessary for optimal performance.
Replacement Considerations
Direct substitutes may include other generic P-channel MOSFETs in TO-92 packages with similar voltage and current ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) before substitution. Cross-reference with official replacement guides for specific industry-standard equivalents.
