2N5415

2N5415

$1.00
  • Description:TRANS PNP 200V 0.1A TO-39
  • Series:-

SKU:52ce0474d258 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 200V 0.1A TO-39
  • Series:-
  • Mfr:onsemi
  • Package:-
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):200 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-39
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

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2N5415

Overview

The onsemi 2N5415 is a PNP high-voltage silicon transistor designed for robust performance in demanding environments. It features a maximum collector-emitter voltage of 300 V and a continuous collector current of 200 mA, housed in a hermetically sealed TO-39 metal can package. The device supports a transition frequency of 15 MHz and dissipates up to 1 W of power. Operating within a junction temperature range of -65°C to 200°C, it ensures reliability across extreme conditions. Key electrical parameters include a minimum DC current gain (hFE) of 30 at 50 mA and 10 V, with a collector cutoff current limited to 50 µA.

Feature Summary

  • Hermetically sealed TO-39 metal can construction provides environmental protection and mechanical durability.
  • High voltage capability allows operation with collector-emitter breakdown voltages up to 300 V.
  • Extended thermal stability supports reliable function across a wide junction temperature range from -65°C to 200°C.

Applications

  • Switching circuits in military equipment
  • Linear amplification in industrial control systems
  • High-voltage consumer electronics

Procurement Notes

Verify the specific manufacturer designation, as the 2N5415 is a JEDEC outline available from multiple vendors including NXP, Central Semiconductor, and Microsemi. Confirm that the sourced component matches the required hermetic sealing and TO-39 package specifications. Ensure the datasheet aligns with the intended high-voltage and temperature requirements before integration into the design.

Selection Notes

Select this component when a high-voltage PNP transistor with hermetic sealing is required. The TO-39 package suits through-hole mounting applications needing superior thermal and environmental resistance compared to plastic packages. Consider the 300 V rating and 200 mA current limit against circuit demands. Verify compatibility with existing PCB layouts designed for standard TO-39 footprints.

Part Context

The 2N5415 is a standardized PNP transistor defined by JEDEC outlines, allowing interchangeability among various manufacturers. While onsemi produces variants, the core specification remains consistent with high-voltage, low-power applications. The TO-39 metal case distinguishes it from modern surface-mount alternatives, targeting legacy or high-reliability designs where hermeticity is critical.

Replacement Considerations

Direct substitutes include the BF821 and MMBT5401, which share similar high-voltage PNP characteristics. Verify pinout compatibility and thermal dissipation capabilities when swapping between manufacturers. Ensure the replacement meets the same hermetic sealing standards if environmental protection is required.

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