2N5416L

2N5416L

$10.98
  • Description:TRANS PNP 300V 1A TO-5
  • Series:-

SKU:369e6fff8116 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 300V 1A TO-5
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
  • Power - Max:750 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5
  • Grade:-
  • Qualification:-

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2N5416L

Overview

The Microchip Technology 2N5416L is a silicon PNP power bipolar junction transistor (BJT) designed for high-voltage applications. It features a collector-emitter voltage (VCEO) of 300 V and a collector-base voltage (VCBO) of 350 V, with an emitter-base breakdown voltage (VEBO) of 6 V. The device supports a maximum DC collector current of 1 A and dissipates up to 1 W of power. It operates within a temperature range of -65 °C to +200 °C. Packaged in a TO-5-3 metal can for through-hole mounting, it offers a DC current gain (hFE) ranging from 15 to 120.

Feature Summary

  • High voltage capability with 300 V collector-emitter breakdown
  • Wide operating temperature range extending to +200 °C
  • Robust 1 A continuous collector current rating
  • Metal TO-5-3 package for reliable thermal performance

Applications

  • High-voltage switching circuits
  • Power amplifier stages
  • Industrial control systems requiring wide temperature tolerance

Procurement Notes

Verify the specific suffix 'L' against the official Microchip datasheet to confirm any distinct marking or testing variations compared to the standard 2N5416. Ensure the procurement channel provides authentic Microchip Technology components to guarantee reliability in high-voltage environments. Cross-reference the TO-5-3 package dimensions and pinout configuration with the mechanical drawings provided in the product documentation before integration.

Selection Notes

Select this component when designing circuits requiring high voltage isolation and robust thermal stability. The 300 V rating makes it suitable for demanding power applications. Consider the TO-5-3 package size for board space constraints. Verify that the required hFE range aligns with the circuit's biasing needs, as the gain varies between 15 and 120. Ensure the system can accommodate the through-hole mounting style.

Part Context

The 2N5416 series belongs to Microchip Technology's portfolio of discrete power semiconductors. These transistors are engineered for durability in harsh electrical conditions. The 2N5416L variant maintains the core electrical specifications of the series while adhering to specific manufacturing standards defined by the manufacturer for quality assurance and consistency across production batches.

Replacement Considerations

Consult the official Microchip cross-reference guide for verified substitutes. Generic equivalents may not match the specific 300 V rating or +200 °C temperature limit. Verify pin compatibility and package dimensions if replacing with other TO-5 variants.

2N5416L2N5416L
$10.98
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