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Product Detailed Parameters
- Description：JFET N-CH 25V TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：7pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5457_D27Z is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) housed in a TO-92 through-hole package. It operates in depletion mode with a maximum drain-source voltage of 25 V and a gate-source breakdown voltage of 25 V. The device features a typical zero-gate-voltage drain current of 1 mA at 15 V, with a range from 0.5 to 5 mA. Input capacitance is specified as a maximum of 3 pF at 15 V. Power dissipation is rated at 310 mW, supporting a junction temperature up to 150 °C.
Feature Summary
- Provides low input capacitance for high-frequency signal integrity
- Supports depletion mode operation for constant current applications
- Utilizes a standard TO-92 through-hole package for easy integration
Applications
- Low-noise preamplifier stages
- Constant current source circuits
- High-impedance buffer amplifiers
Procurement Notes
Verify the component authenticity by checking the marking code against official onsemi documentation. Confirm the RoHS compliance status and ensure the package type matches the required PCB footprint. Cross-reference the specific suffix with manufacturer databases to confirm availability and exact electrical tolerances before finalizing procurement plans.
Selection Notes
Select this JFET when a low-noise, high-input impedance solution is required for analog signal processing. Ensure the circuit design accommodates the depletion mode characteristic, where the channel conducts at zero gate bias. Verify that the 25 V voltage rating exceeds the maximum operating drain-source potential in the target application environment.
Part Context
This component belongs to the 2N545x series of N-channel JFETs, which are widely used in analog electronics. The 2N5457 variant specifically offers a moderate drain current range suitable for general-purpose amplification. It serves as a discrete alternative to integrated FET-input operational amplifiers in specialized low-noise designs.
Replacement Considerations
Compatible substitutes include the 2N5458 and MMBF5457. Verify pinout compatibility and electrical parameter overlaps, particularly regarding drain current ranges and breakdown voltages, before implementing any cross-replacement in existing hardware designs.
