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The onsemi 2N5458G is an N-channel Junction Field-Effect Transistor (JFET) designed for small-signal applications. It features a maximum drain-source voltage of 25 V and a gate-source voltage rating of 25 V. The device operates in depletion mode with a typical drain current of 2 mA at 15 V. Power dissipation is rated at 310 mW, supporting a junction temperature up to 135°C. Input capacitance is specified as a maximum of 7 pF at 15 V, while the gate cutoff voltage is 1 V at 10 nA. The component utilizes a TO-92 through-hole package.
Verify component authenticity through authorized distribution channels due to discontinued status. Confirm RoHS compliance and lead-free specifications during acquisition. Check datasheet revisions for parameter updates. Validate packaging type against project requirements. Ensure storage conditions maintain moisture sensitivity level 1 integrity prior to assembly.
Select this component for designs requiring N-channel JFETs with 25 V breakdown limits. Consider the 310 mW power dissipation capability for thermal management. Evaluate the TO-92 package constraints for PCB layout. Compare input capacitance values against high-frequency requirements. Assess the 2 mA drain current specification for biasing needs.
The 2N5458G belongs to the standard 2N5458 family of N-channel JFETs manufactured by onsemi. It serves as a direct replacement for legacy 2N5458 components in existing designs. The part maintains compatibility with standard TO-92 footprints used in general-purpose analog electronics. It represents a discontinuation phase within the manufacturer's portfolio.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility if considering alternative manufacturers. Check electrical parameter overlaps for functional equivalence.