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Product Detailed Parameters
- Description：JFET P-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 5 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：750 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：10pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：300 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N2608UB is a silicon P-channel Junction Field-Effect Transistor (JFET) designed for general-purpose small-signal applications. It utilizes a TO-18 metal can package with three pins and supports through-hole mounting. The device operates in depletion mode and features a gate-source breakdown voltage of 30 V. The drain-source cutoff voltage ranges from 750 mV to 6 V, while the drain-source current at zero gate-source voltage spans from -1 mA to -5 mA. Power dissipation is rated at 300 mW, with an operating temperature range extending from -65°C to +200°C.
Feature Summary
- P-channel JFET configuration suitable for analog signal processing
- Metal can construction providing robust physical protection
- Extended thermal capability supporting high-temperature environments
Applications
- General-purpose small-signal amplification circuits
- Analog switching applications requiring low leakage
- High-temperature electronic systems
Procurement Notes
Verify the specific suffix designation against official Microchip documentation to confirm exact electrical binning and testing criteria. Ensure that the procurement channel provides traceability to the original manufacturer. Confirm RoHS compliance status as indicated in the product specifications before finalizing orders.
Selection Notes
Select this component when a P-channel JFET with a TO-18 package is required for through-hole assembly. Consider the 300 mW power dissipation limit and the wide operating temperature range when designing for harsh environments. Verify that the gate-source voltage requirements align with the circuit's biasing conditions.
Part Context
The 2N2608UB belongs to the broader family of silicon JFETs manufactured by Microchip Technology. This series includes various part numbers differentiated by specific electrical parameters and packaging options. The 2N2608 variant represents a standard general-purpose device within this lineup, often utilized in legacy or military-grade designs requiring reliable analog performance.
Replacement Considerations
Consult official substitution guides for compatible P-channel JFETs in TO-18 packages. Verify pinout compatibility and ensure that alternative devices meet or exceed the 30 V gate-source breakdown voltage and 300 mW power dissipation ratings.
