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The onsemi 2N5460G is a P-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for general-purpose amplification. It utilizes silicon technology and is housed in a TO-92 three-pin through-hole package. Key electrical ratings include a Drain-Gate Voltage of -40 V, a Gate-Source Voltage of 40 V, and a Forward Gate Current limit of 10 mA. The device supports a maximum junction and storage temperature range from -55°C to +150°C. It features a low feedback capacitance of 2 pF, making it suitable for high-impedance signal applications.
Verify the specific suffix 'G' against the manufacturer's official documentation to confirm RoHS compliance status and exact pinout configuration. Ensure the ordering information matches the required package type and thermal specifications for the intended application environment.
Select this component for designs requiring a P-channel depletion-mode JFET with robust voltage handling capabilities. Consider the TO-92 package constraints for thermal management and board space. Verify that the 2 pF feedback capacitance meets the bandwidth requirements of the target signal frequency.
This part belongs to the 2N5460/5461/5462 series of P-channel JFETs manufactured by onsemi. These devices are sourced from Process 89 and are commonly used as direct replacements for older industry-standard equivalents in analog signal processing circuits.
Compatible substitutes within the same family include 2N5461 and 2N5462. Surface-mount alternatives such as MMBF5460, MMBF5461, and MMBF5462 offer equivalent electrical performance in SOT-23 packages.