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The onsemi 2N5461 is a P-channel Junction Field-Effect Transistor (JFET) designed for general-purpose amplification. It operates in depletion mode and utilizes silicon technology within a TO-92 through-hole package. Key electrical specifications include a maximum drain-source voltage of -20 V, a continuous drain current of -10 mA, and a gate-source cutoff voltage ranging from -0.5 V to -6 V. The device features a low feedback capacitance of 2 pF and a maximum DC input resistance of 10^9 ohms at -15 V. Power dissipation is rated at 310 mW, with an operating temperature range extending up to +150 °C.
Verify the specific manufacturer lot and date code upon receipt to ensure compliance with project requirements. Confirm RoHS status and packaging details against the official datasheet. Check for any obsolescence notices or lifecycle changes directly from onsemi documentation before finalizing procurement plans.
Select this component for applications requiring P-channel JFETs with low noise and high input impedance. Ensure the circuit design accommodates the specified -20 V drain-source voltage and -10 mA current limits. Consider the TO-92 package constraints for thermal management and board space compared to surface-mount alternatives.
The 2N5461 belongs to the family of P-channel JFETs including the 2N5460 and 2N5462. These devices are commonly used together in differential pairs or balanced amplifier configurations. The series is characterized by consistent electrical parameters across manufacturers, facilitating cross-brand substitution in standard analog designs.
Direct substitutes include the 2N5460 and 2N5462 from various manufacturers. Other compatible parts may include the J270 or SST174, provided their electrical ratings match the application requirements.