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The 2N5461G is a P-channel junction field-effect transistor (JFET) manufactured by onsemi. It operates in depletion mode and is designed for low-level audio and general-purpose applications involving high-impedance signal sources. The device features a single-element silicon construction housed in a TO-92 package with three pins. Key electrical characteristics include a drain-gate voltage rating of -40 V, a gate-source voltage limit of ±40 V, and a forward gate current capacity of 10 mA. The component supports an operating and storage junction temperature range from -55 °C to +150 °C.
The 2N5461G belongs to the 2N5460/5461/5462 family of P-channel JFETs produced by onsemi. This series is sourced from Process 89 manufacturing lines. The component is functionally related to the MMBF5461 surface-mount variant, offering equivalent electrical performance in different packaging formats for diverse circuit board requirements.