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The Central Semiconductor Corp 2N5486 APM TIN/LEAD is a silicon N-channel Junction Field-Effect Transistor (JFET) designed for RF small-signal applications. It operates in depletion mode within the Ultra High Frequency band, housed in a TO-92 (TO-226AA) through-hole package. Key electrical ratings include a Drain-Gate Voltage of 25V, Source-Gate Voltage of 25V, and a maximum Drain Current of 30mA. The device features a low feedback capacitance of 1pF and supports operating temperatures from -65°C to +150°C.
Verify component authenticity against official datasheets due to potential availability constraints. Confirm lead-free status requirements as the specific suffix indicates tin/lead composition. Cross-reference pinouts and absolute maximum ratings before integration to ensure compatibility with existing system designs.
Select this component for designs requiring N-channel JFETs in UHF bands. Ensure circuit voltage limits remain below 25V for gate-source and gate-drain connections. Verify that the 30mA drain current limit accommodates peak signal demands without exceeding power dissipation thresholds in the TO-92 package.
This part belongs to the standard 2N5486 family of silicon N-channel JFETs. The APM TIN/LEAD suffix denotes specific packaging and material composition details provided by Central Semiconductor. It serves as a direct functional equivalent to other manufacturers' 2N5486 variants for general RF purposes.
Direct substitutes include Vishay/Siliconix 2N5486-E3 and Atmel/Microchip 2N5486LTA. Verify pinout compatibility and thermal characteristics when swapping between these vendors to maintain circuit integrity.