2N5550BU

Overview

The onsemi 2N5550BU is a general-purpose NPN silicon epitaxial planar transistor designed for amplifier applications. It features a maximum collector-emitter voltage of 140 V and a continuous collector current of 600 mA. The device operates within a temperature range of -55°C to +150°C and dissipates up to 625 mW of power. It utilizes a TO-92-3 through-hole package with a single configuration.

Feature Summary

• High-voltage capability suitable for demanding amplifier circuits
• Robust thermal performance with extended operating temperature limits
• General-purpose design optimized for linear signal amplification

Applications

• General purpose amplifier stages
• High voltage switching applications
• Linear circuit design requiring NPN polarity

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status directly with the manufacturer documentation. Ensure the TO-92-3 package matches the target PCB footprint requirements before finalizing procurement decisions.

Selection Notes

Select this component when high voltage handling and moderate current drive are required in a small form factor. Compare the 140 V breakdown rating against circuit peak voltages. Consider the 625 mW power dissipation limit relative to thermal management constraints in the final assembly design.

Part Context

This part belongs to the standard 2N5550 series of NPN transistors manufactured by onsemi. It serves as a direct equivalent to other industry-standard high-voltage NPN devices. The BU suffix typically denotes specific packaging or tape-and-reel variations within the broader product family.

Replacement Considerations

Cross-reference with 2N5550G or 2N5551BU for similar specifications. Verify that substitute parts maintain compatible voltage ratings and package dimensions. Check manufacturer datasheets for any differences in gain bandwidth or saturation characteristics.