2N5550RLRAG

Overview

The onsemi 2N5550RLRAG is an NPN silicon epitaxial planar transistor designed for high-voltage amplifier applications. It features a collector-emitter voltage of 140 V and a continuous collector current of 600 mA. The device operates within a junction temperature range of -55°C to +150°C and offers a maximum power dissipation of 625 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain ranging from 20 to 250, a transition frequency up to 300 MHz, and low noise figures. Packaged in a lead-free TO-92 (Case 29) format, it supports through-hole mounting.

Feature Summary

• High-voltage capability with a 140 V collector-emitter breakdown rating suitable for demanding circuit environments.
• Low noise performance optimized for sensitive signal amplification tasks.
• Lead-free packaging compliant with environmental standards while maintaining standard TO-92 form factor compatibility.

Applications

• General-purpose high-voltage amplifier circuits
• Telephony switching and amplification systems
• Small-signal processing stages requiring low noise

Procurement Notes

Verify the specific ordering suffix 'RLRAG' confirms the tape-and-reel packaging quantity and lead-free status as defined in the official datasheet. Confirm that the component meets RoHS requirements if applicable to your assembly process. Ensure the supplier provides documentation matching the 2N5550/D publication number to guarantee authenticity and correct revision level.

Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required. Compare the 140 V VCEO against the 2N5551's 160 V rating to match specific circuit voltage headroom needs. Consider the TO-92 package constraints for thermal management if operating near maximum power dissipation limits without heatsinking.

Part Context

This part belongs to the 2N5550/2N5551 family of NPN silicon transistors manufactured by onsemi. It serves as a preferred device choice for general-purpose high-voltage applications. The RLRA suffix indicates tape-and-reel packaging, while the G suffix denotes lead-free construction. It is functionally similar to other industry-standard high-voltage small-signal transistors.

Replacement Considerations

The 2N5551 is a direct functional substitute offering higher voltage ratings (160 V VCEO). Other compatible alternatives include the PMST5550 from Nexperia, though it utilizes a different SMD package. Verify pinout compatibility and thermal characteristics before substituting.