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The Fairchild Semiconductor 2N5550TA is an NPN bipolar junction transistor (BJT) designed for high-voltage switching and amplification applications. It features a collector-emitter breakdown voltage of 160 V and a continuous collector current rating of 600 mA. The device operates with a transition frequency of 300 MHz and supports a maximum power dissipation of 625 mW. Packaged in the TO-92-3 through-hole format, it offers a DC current gain (hFE) of at least 60 at 10 mA and 5 V. The component is rated for a maximum junction temperature of 150°C.
Verify the specific suffix TA against official Fairchild documentation to confirm package type and lead-free status. Ensure the procurement channel provides valid datasheets matching the manufacturer product number. Confirm RoHS compliance requirements align with project specifications before finalizing orders.
Select this component when circuit designs require high-voltage handling capabilities exceeding standard low-voltage transistors. The TO-92-3 package facilitates easy integration into through-hole prototyping and manufacturing processes. Evaluate the 600 mA current rating against peak load requirements to ensure safe operation within thermal limits.
This part belongs to the 2N5550 family of NPN transistors manufactured by Fairchild Semiconductor. It serves as a discrete semiconductor solution for analog and digital switching applications. The device complements other components in power management and signal conditioning systems requiring reliable high-voltage performance.
Consult official substitution guides for equivalent high-voltage NPN transistors. Verify pinout compatibility and electrical parameter overlaps before implementing alternative components in existing designs.