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The Fairchild Semiconductor 2N5550TFR is a small signal NPN bipolar junction transistor housed in a TO-92 package. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 140 V. The device has a collector-base voltage of 160 V and an emitter-base voltage of 6 V. Key electrical characteristics include a minimum DC current gain (hFE) of 20, a maximum transition frequency of 300 MHz, and a power dissipation of 625 mW. It operates at temperatures up to 150°C.
Verify the manufacturer designation carefully as onsemi acquired Fairchild Semiconductor. Ensure the ordering suffix matches the required tape and reel configuration. Confirm RoHS compliance status through official datasheets or component markings. Cross-reference part numbers with updated onsemi catalogs to ensure availability and correct specifications.
Select this component when a single NPN transistor with high voltage tolerance is required. Compare hFE ranges against circuit biasing requirements. Consider thermal management due to the TO-92 package limitations. Verify that the 625mW power dissipation meets the application's thermal constraints.
This component belongs to the 2N5550 series of NPN transistors. It is functionally similar to other general-purpose high-voltage NPN devices. The TO-92 package provides a compact solution for through-hole mounting. It serves as a discrete alternative to integrated transistor arrays in low-power designs.
Check for direct equivalents such as the 2N5550 without the TFR suffix for bulk packaging. Verify pinout compatibility before substitution. Consult onsemi documentation for updated cross-reference lists following the Fairchild integration.