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The MCC 2N5551-AP is an NPN silicon general-purpose amplifier transistor housed in a TO-92 package. It supports a maximum collector current of 600 mA and offers high voltage ratings, including a collector-emitter breakdown voltage of 160 V and a collector-base breakdown voltage of 180 V. The device features a transition frequency up to 300 MHz and a DC current gain ranging from 80 to 300. It operates within a junction temperature range of -55°C to +150°C with a power dissipation capacity of 625 mW.
Verify the specific suffix against official Micro Commercial Components documentation to confirm packaging type and compliance status. Ensure the source is an authorized distributor to guarantee component authenticity and traceability. Confirm that the ordering information matches the required packing configuration before finalizing procurement.
Select this component when circuit designs require an NPN transistor capable of handling 160 V collector-emitter voltage and 600 mA continuous current. The TO-92 through-hole package facilitates standard prototyping and manufacturing processes. Verify that the thermal resistance and power derating curves align with the expected ambient operating conditions.
This part belongs to the 2N5551 family of NPN bipolar junction transistors manufactured by Micro Commercial Components. It serves as a general-purpose discrete semiconductor device designed for robust performance in various electronic circuits. The component utilizes silicon epitaxial planar technology to ensure reliable operation under specified electrical limits.
Compatible substitutes include the 2N5551HR for radiation-hardened requirements and the MMBT5551-TP for surface-mount SOT-23 implementations. Verify pinout compatibility and electrical parameter equivalence before substituting.
The maximum collector-emitter breakdown voltage (VCEO) is 160 V.
Standard versions may contain halogens; adding the "-HF" suffix designates a halogen-free variant.
The device has a Moisture Sensitivity Level of 1.