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Product Detailed Parameters
- Description：160V 600MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5551 TRA PBFREE is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 160 V and a maximum continuous collector current of 600 mA. The device operates with a transition frequency of 300 MHz and supports a maximum power dissipation of 2 W. Packaged in the SOT-223 form factor, it maintains a minimum DC current gain of 80 at specified test conditions. The component functions reliably within a junction temperature range of -65°C to 150°C.
Feature Summary
- High-voltage capability suitable for demanding switching environments
- Surface-mount construction for automated assembly integration
- Wide thermal operating range for robust performance
Applications
- General-purpose switching circuits
- Amplifier stages requiring high voltage tolerance
- Driver circuits for low-power loads
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm exact packaging and handling specifications. Confirm availability status as distribution listings may vary. Ensure compliance with relevant environmental directives such as RoHS requirements before finalizing procurement decisions for production integration.
Selection Notes
Select this component when a surface-mount NPN transistor with 160 V blocking capability is required. Compare the 2 W power dissipation rating against circuit thermal constraints. Verify that the SOT-223 package dimensions fit the designated footprint. Ensure the 300 MHz transition frequency meets the signal speed requirements of the target application design.
Part Context
This part belongs to the standard NPN transistor family manufactured by Central Semiconductor Corp. It shares core electrical characteristics with other variants in the series but differs in physical packaging and termination style. The SOT-223 package distinguishes it from through-hole equivalents, offering higher power handling than smaller surface-mount packages while maintaining compact board space utilization.
Replacement Considerations
Consult official cross-reference tools for parametrically similar parts. Verify pinout compatibility and thermal resistance values before substituting. Ensure replacement components meet or exceed the original 160 V and 600 mA ratings.
