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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551RLRM is an NPN general-purpose amplifier transistor designed for high-voltage applications. It features a collector-emitter voltage of 160 V and a continuous collector current of 600 mA. The device operates within a junction temperature range of -55 to +150 °C with a total power dissipation of 625 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, VCE = 5 V, and a transition frequency (fT) of 100 MHz at IC = 10 mA, VCE = 10 V.
Feature Summary
- Designed for general-purpose high-voltage amplifiers
- Suitable for gas discharge display drivers
- Compliant with Pb-Free, Halogen Free/BFR Free, and RoHS standards
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm current availability status as some variants in this series may be discontinued. Ensure compliance with environmental regulations relevant to your region before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring moderate voltage handling up to 160 V and low-to-moderate current switching or amplification. Consider the TO-92 package constraints for thermal management if operating near maximum power dissipation limits. Verify that the required hFE binning meets the specific gain requirements of the target application circuit.
Part Context
This part belongs to the 2N5551 family of NPN bipolar junction transistors manufactured by onsemi. The family includes various packaging options such as bulk bags and tape & reel configurations. These devices are standard discrete semiconductors intended for commercial and industrial electronic designs requiring reliable NPN switching or linear amplification capabilities.
Replacement Considerations
Consult the manufacturer's discontinuation notice for obsolete variants like 2N5551CTA or 2N5551YBU. Direct functional equivalents should be sourced based on matching VCEO, IC, and package dimensions. Verify pinout compatibility before substituting.
