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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551TAR is an NPN general-purpose amplifier transistor designed for high-voltage applications. It features a collector-emitter voltage (VCEO) of 160 V and a collector-base voltage (VCBO) of 180 V. The device supports a continuous collector current (IC) of 600 mA with a total power dissipation (PD) of 625 mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, and a transition frequency (fT) of 100 MHz. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Designed for general-purpose high-voltage amplifiers
- Suitable for gas discharge display drivers
- Compliant with RoHS standards and free of halogens and brominated flame retardants
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm component status as active or discontinued before procurement. Ensure compliance requirements match project specifications. Validate thermal resistance parameters for heat management planning. Cross-reference datasheet revision history for updated electrical limits.
Selection Notes
Select this component for circuits requiring high-voltage handling up to 160 V in a standard through-hole package. Evaluate the hFE range of 80 to 250 for appropriate biasing in amplifier stages. Consider the 625 mW power dissipation limit and derating curve for thermal design. Verify that the 100 MHz transition frequency meets signal bandwidth requirements.
Part Context
This part belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It utilizes a TO-92-3 lead-formed package (Case 135AR). The 'TA' suffix indicates a specific packaging format, typically Ammo Pack, while 'TAR' denotes Tape and Reel packaging within the same electrical specification family.
Replacement Considerations
Consult the manufacturer's discontinuation notice for obsolete variants like 2N5551CTA or 2N5551YBU. Verify pinout compatibility and thermal characteristics when substituting with other NPN transistors in the same voltage class.
