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Product Detailed Parameters
- Description：TRANS PNP 60V 5A TO204AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：58 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-204AA (TO-3)
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Overview
The Microchip Technology 2N5613 is a silicon PNP power bipolar junction transistor (BJT) housed in a TO-3 metal can package. It is designed for general-purpose amplifier and switching applications, featuring an excellent safe operating area and low collector saturation voltage. The device utilizes a three-terminal configuration with Base, Emitter, and Collector pins arranged to support robust power handling capabilities typical of the TO-3 form factor.
Feature Summary
- Utilizes a rugged TO-3 metal can package for high thermal dissipation and mechanical stability.
- Engineered with an excellent safe operating area to ensure reliability under varying load conditions.
- Designed with low collector saturation voltage characteristics to minimize power loss during conduction.
Applications
- General-purpose linear amplifier circuits
- High-power switching applications
Procurement Notes
Verify the specific manufacturer source, as documentation indicates availability from multiple suppliers including Inchange Semiconductor and Microchip Technology. Confirm the exact datasheet version and pinout compatibility before integration, as packaging details and absolute maximum ratings may vary between sources. Ensure the component meets the required military or industrial specifications if applicable to the design.
Selection Notes
Select this component for designs requiring a high-current PNP transistor in a through-hole metal package. The TO-3 form factor is suitable for board-level mounting where heat sinking is critical. Consider the base-emitter and collector-base voltage ratings against the circuit's peak operating voltages to ensure operation within the safe operating area limits defined in the official specification.
Part Context
The 2N5613 belongs to the family of silicon PNP power transistors, often grouped with similar devices like the 2N5615, 2N5617, and 2N5619. These components share the TO-3 package style and are intended for power handling tasks. The part number follows the standard JEDEC numbering convention for bipolar transistors, indicating its classification as a discrete semiconductor device.
