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The Microchip Technology 2N5622 is a silicon NPN power transistor housed in a hermetically sealed TO-3 metal package. It features a collector-emitter sustaining voltage of 60V minimum and supports a maximum collector current of 10A. The device offers a DC current gain (hFE) range of 70 to 200 at 5A, with a transition frequency of 40 MHz. Designed for high-power applications, it provides excellent safe operating area characteristics and low collector saturation voltage.
Verify the manufacturer source carefully, as multiple vendors including Savantic and Semelab produce this part number. Confirm the specific datasheet version matches your electrical requirements, particularly regarding hFE ranges and thermal resistance values. Ensure the package type is strictly TO-3 metal for compatibility with existing heat sinks and mounting hardware.
Select this component when a hermetically sealed NPN transistor is required for high-reliability environments. The TO-3 package offers superior thermal dissipation compared to plastic packages. Consider the 60V VCEO rating and 10A IC limit to ensure adequate headroom for the intended load. Verify that the 40 MHz transition frequency meets the speed requirements of the application.
The 2N5622 belongs to a family of silicon NPN power transistors designed for medium-to-high power applications. It is commonly used in linear and switching modes where reliability is critical. The hermetic seal protects against moisture and contaminants, making it suitable for industrial and aerospace contexts where standard plastic-packaged devices might fail prematurely.
Public confirmed substitute part numbers include 2N5624 and 2N5626 from compatible manufacturers. These variants share similar NPN power transistor characteristics but may differ in specific voltage or current ratings. Always cross-reference the absolute maximum ratings before substitution.