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Product Detailed Parameters
- Description：TRANS NPN 250V 0.5A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk,Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：10V @ 100mA, 500mA
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 100mA, 10mV
- Power - Max：20 W
- Frequency - Transition：10MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5655G is a plastic NPN silicon high-voltage power transistor designed for line-operated equipment. It features a collector-emitter voltage (VCEO) of 250 Vdc and a continuous collector current (IC) of 0.5 Adc. The device supports a total power dissipation of 20 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 6.25 °C/W. It operates within a junction temperature range of –65 to +150 °C. The transistor offers an excellent DC current gain and a high current-gain bandwidth product of 10 MHz.
Feature Summary
- Designed for use in line-operated equipment such as audio output amplifiers, low-current high-voltage converters, and AC line relays.
- Features excellent DC current gain characteristics suitable for amplifier applications.
- High current-gain bandwidth product ensures effective performance in switching and signal processing tasks.
Applications
- Audio output amplifiers
- Low-current, high-voltage converters
- AC line relays
Procurement Notes
Verify the specific ordering suffix 'G' indicates a Pb-Free package compliant with RoHS standards. Confirm the package type is TO-225 (Case 77-09) and check shipping quantities, which are typically 500 units per bulk package. Ensure the component meets the required thermal management specifications for your application.
Selection Notes
Select the 2N5655G when a high-voltage NPN transistor with moderate current handling is required. Consider the 2N5657G if a higher collector-emitter voltage rating of 350 V is needed. Evaluate the thermal resistance and safe operating area curves to ensure reliable operation under your specific load and temperature conditions.
Part Context
This component belongs to the Plastic NPN Silicon High-Voltage Power Transistors family from onsemi. It is part of a series that includes complementary or variant devices like the 2N5657G, offering different voltage ratings while maintaining similar package and functional characteristics for versatile design integration.
Replacement Considerations
The 2N5657G serves as a direct pin-compatible alternative within the same series, distinguished by a higher collector-emitter voltage rating of 350 V compared to the 250 V of the 2N5655G. Verify voltage requirements before substitution.
FAQ
What is the maximum collector-emitter voltage for the 2N5655G?
The maximum collector-emitter voltage (VCEO) for the 2N5655G is 250 Vdc.
Is the 2N5655G RoHS compliant?
Yes, the 2N5655G with the 'G' suffix is Pb-Free and RoHS compliant.
What is the thermal resistance junction-to-case for this device?
The thermal resistance from junction to case (RθJC) is 6.25 °C/W.
