2N5661P

Overview

The 2N5661P is an NPN power silicon transistor manufactured by Microchip Technology. It is designed for high-voltage applications and features a collector-emitter voltage of 300V and a continuous collector current rating of 2A. The device dissipates up to 2W of power and operates within a junction temperature range of -65°C to +200°C. Packaged in the TO-66 (TO-213AA) metal case, it meets MIL-PRF-19500/454 standards. Key electrical characteristics include a minimum DC current gain of 25 at 500mA and 5V, with a base-emitter saturation voltage of 800mV at 400mA.

Feature Summary

• High-voltage capability with a 300V collector-emitter breakdown rating
• Robust thermal performance supporting operation up to +200°C junction temperature
• Military-grade qualification compliant with MIL-PRF-19500/454 specifications
• Durable metal TO-66 package construction for reliable through-hole mounting

Applications

• High-voltage switching circuits
• Industrial control systems requiring rugged components
• Power amplification stages in military equipment
• Automotive electronics operating under extreme temperatures

Procurement Notes

Verify that the specific part number matches the required military or commercial grade variant, as the datasheet covers multiple levels including JAN, JANTX, and JANTXV. Confirm the package type is TO-66 and ensure compatibility with existing PCB footprints. Check for RoHS compliance status if environmental regulations apply to your assembly process. Validate supplier authenticity to avoid counterfeit components.

Selection Notes

Select this component when a high-voltage NPN transistor is required for power handling up to 2A. The wide operating temperature range makes it suitable for harsh environments where standard silicon devices might fail. Consider the TO-66 package size constraints and thermal management requirements for heat dissipation. Ensure the application voltage does not exceed the 300V limit to maintain reliability.

Part Context

The 2N5661P belongs to a family of NPN power silicon transistors specified under Microsemi/Microchip Technology documentation. This series includes related parts such as the 2N5660, 2N5662, and 2N5663, which share similar structural designs but may vary in specific electrical ratings. These devices are commonly used in aerospace and defense applications due to their adherence to strict military standards.

Replacement Considerations

• 2N5661U3