2N5671

Overview

The 2N5671 is a silicon NPN power transistor manufactured by Inchange Semiconductor. It is housed in a TO-3 package and designed for high current and fast switching industrial applications. The device features an open emitter collector-base voltage of 90 V, a collector-emitter voltage of 90 V, and an emitter-base voltage of 10 V. It supports a continuous collector current of 30 A with a maximum junction temperature of 200 °C.

Feature Summary

• High current capability suitable for demanding industrial loads
• Fast switching performance optimized for rapid state transitions
• Robust thermal design utilizing the TO-3 metal can package

Applications

• High current industrial switching circuits
• Fast switching power control systems
• Industrial motor drive interfaces

Procurement Notes

Verify the manufacturer designation carefully, as the datasheet indicates Inchange Semiconductor as the producer rather than Harris Corporation. Confirm the specific electrical ratings match the application requirements, particularly the 30 A current limit and 90 V voltage thresholds. Ensure the TO-3 package mounting specifications align with the system's thermal management strategy before finalizing procurement.

Selection Notes

Select this component when high current handling and rapid switching speeds are required in industrial environments. The TO-3 package provides effective heat dissipation for high-power operations. Consider the 90 V breakdown voltage limits to ensure compatibility with the circuit's operating voltage levels and transient conditions.

Part Context

This part belongs to the family of silicon NPN power transistors intended for robust industrial use. It is distinct from other discrete semiconductors by its specific combination of high current capacity and fast switching characteristics within the TO-3 form factor.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.